LU Gang,WANG Bo,GE Yun-wang.Effects of Mg-doping concentration on the characteristics of InGaN based solar cells[J].Optoelectronics Letters,2015,11(5):348-351 Effects of Mg-doping concentration on the characteristics of InGaN based solar cells Author Name Affiliation LU Gang  Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023, China  WANG Bo  Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023, China  GE Yun-wang  Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023, China  Abstract:       A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 cm-3, 5×1017 cm-3, 2×1018 cm-3, 4×1018 cm-3 and 7×1018 cm-3 in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×1018 cm-3, the crystal quality degrades, which results in the reduction of the external quantum efficiency (EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×1017 cm-3 exhibits the highest conversion efficiency. Hits: 4004 Download times: 0 This work has been supported by the Key Scientific Research Project of Higher Education of Henan Province (No.15A510033). View Full Text    Download reader