| YANG Hui-shan,YANG Qi-zhen,WU Li-shuang.Organic light emitting devices employing non-doped structure[J].Optoelectronics Letters,2017,13(3):192-196 |
| Organic light emitting devices employing non-doped structure |
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| Abstract: |
| 11H(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T) with different thicknesses of 0.05 nm, 0.10 nm and 0.20 nm. For comparing, a doped WOLED was also fabricated, in which C545T and DCM2 are codoped into DPVBi layer to provide blue, green and red emission for obtaining white emission. The maximum luminance and power efficiency of the doped WOLED are 5 765 cd/m2 at 16 V and 5.23 lm/W at 5 V, respectively, and its Commission Internationale de l’Eclairage (CIE) coordinate changes from (0.393 7, 0.445 3) at 5 V to (0.300 7, 0.373 8) at 12 V. When the thickness of the ultrathin C545T layer in non-doped WLEDs increases, the emission luminance increases, but all non-doped devices are in the yellow white region. The device with 0.10-nm-thick C545T has a maximum efficiency of 15.23 cd/A at 8 V and a maximum power efficiency of 6.51 lm/W at 7 V, and its maximum luminance is 10 620 cd/m2 at 16 V. CIE coordinates of non-doped WLEDs with C545T thickness of 0.05 nm, 0.10 nm and 0.20 nm are (0.447 3, 0.455 6), (0.464 0, 0.473 1) and (0.458 4, 0.470 0) at 8 V, respectively. This work has been supported by the Major Project of Science and Technology Office of Fujian Province of China (No.2014H0042), the Natural Science Foundation of Fujian Province of China (No.2015J01664), the Project of Science and Technology Research of Quanzhou in Fujian Province of China (Nos.2013Z125 and 2014Z137), and the 2016 Annual National or Ministries of the Quanzhou Normal University Prepare Research Foundation Project (No.2016YYKJ21).E-mail:lishuangw@126.com |
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