| Md. Mottaleb Hosen,A. K. M. Atique Ullah,Md. Mahbubul Haque,S. M. Abdur Rahim,K. M. Abdus Sobahan,M. N. I. Khan.Optical and electrical properties of crystalline indium tin oxide thin film deposited by vacuum evaporation technique[J].Optoelectronics Letters,2019,15(5):356-359 |
| Optical and electrical properties of crystalline indium tin oxide thin film deposited by vacuum evaporation technique |
| Author Name | Affiliation | | Md. Mottaleb Hosen | Department of Electrical and Electronic Engineering, Islamic University, Kushtia 7003, Bangladesh | | A. K. M. Atique Ullah | Nanoscience and Technology Research Laboratory, Atomic Energy Centre, Bangladesh Atomic Energy Commission, Dhaka 1000, Bangladesh
Analytical Chemistry Laboratory, Chemistry Division, Atomic Energy Centre, Bangladesh Atomic Energy Commission, Dhaka 1000, Bangladesh | | Md. Mahbubul Haque | Department of Physics, Jagannath University, Dhaka 1100, Bangladesh | | S. M. Abdur Rahim | Department of Electrical and Electronic Engineering, Islamic University, Kushtia 7003, Bangladesh | | K. M. Abdus Sobahan | Department of Electrical and Electronic Engineering, Islamic University, Kushtia 7003, Bangladesh | | M. N. I. Khan | Materials Science Division, Atomic Energy Centre, Bangladesh Atomic Energy Commission, Dhaka 1000, Bangladesh |
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| Abstract: |
| Indium tin oxide (ITO) thin film was deposited on glass substrate by means of vacuum evaporation technique and annealed at 200 °C, 300 °C and 400 °C in air for 1 h. The characterization and properties of the deposited film samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-VIS-NIR spectroscopy techniques. From the XRD patterns, it was found that the deposited thin film was of crystalline at an annealing temperature of 400 °C. The crystalline phase was indexed as cubic structure with lattice constant and crystallite size of 0.511 nm and 40 nm, respectively. The SEM images showed that the films exhibited uniform surface morphology with well-defined spherical grains. The optical transmittance of ITO thin film annealed at 400 °C was improved from 44% to 84% in the wavelength range from 250 nm to 2 100 nm and an optical band gap was measured as 3.86 eV. Hall effect measurement was used to measure the resistivity and conductivity of the prepared film. |
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