XING Zhong-qiu,ZHOU Yong-jie,CHEN Xue,Mussaab，I. Niass,WANG Yi-fu,WANG Fang,LIU Yu-huai.Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells[J].Optoelectronics Letters,2020,16(2):87-91 Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells Author Name Affiliation XING Zhong-qiu  National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China  ZHOU Yong-jie  School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, China  CHEN Xue  National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China  Mussaab，I. Niass  National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China  WANG Yi-fu  National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China  WANG Fang  National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China  LIU Yu-huai  National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China  Abstract:       An AlGaN-based deep ultraviolet laser diode with convex quantum wells structure is proposed. The advantage of using a convex quantum wells structure is that the radiation recombination is significantly improved. The improvement is attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes, which results in an increased hole injection efficiency and a decreased electron leakage into the p-type region. Particularly, comparisons with the convex quantum barriers structure and the reference structure show that the convex quantum wells structure has the best performance in all respects. Hits: 1358 Download times: 0 View Full Text    Download reader