Abhijit Chatterjee,Atul Abhale,Naresh Pendyala,KSR Koteswara Rao.Group II-VI semiconductor quantum dot heterojunction photodiode for mid wave infrared detection[J].Optoelectronics Letters,2020,16(4):290-292
Group II-VI semiconductor quantum dot heterojunction photodiode for mid wave infrared detection
Author NameAffiliation
Abhijit Chatterjee Space Applications Centre ISRO, Sensors Development Area, Ahmedabad 380015, India 
Atul Abhale Department of Physics, Indian Institute of Science, Bangalore 560012, India 
Naresh Pendyala Space Applications Centre ISRO, Sensors Development Area, Ahmedabad 380015, India 
KSR Koteswara Rao Department of Physics, Indian Institute of Science, Bangalore 560012, India 
Abstract:
      In this article we report the development of 10×10 photodiode array by realizing heterojunction between mercury cadmium telluride (HgCdTe) quantum dot (diameter ~14 nm) and silicon responsive in mid wave infrared (MWIR) range (l=3—5 μm) at room temperature. Performance of this optical sensor has been evaluated experimentally and Detectivity of 1.6×108 cm /W has been achieved at spectral wavelength of 3.5 μm at 300 K. This work ascertains the compatibility of chemically synthesized HgCdTe quantum dots with commercially available direct injection type readout integrated circuits (ROIC) for the development of low cost large format MWIR focal plane array (FPA).
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