| LIU Zhaojun,ZHU Lianqing,ZHENG Xiantong,LU Lidan,ZHANG Dongliang,LIU Yuan.Effect of growth interruption time on the quality of InAs/GaSb type-II superlattice grown by molecular beam epitaxy[J].Optoelectronics Letters,2023,(3):155-158 |
| Effect of growth interruption time on the quality of InAs/GaSb type-II superlattice grown by molecular beam epitaxy |
| Author Name | Affiliation | | LIU Zhaojun | School of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China | | ZHU Lianqing | Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China | | ZHENG Xiantong | Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China | | LU Lidan | Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China | | ZHANG Dongliang | Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China | | LIU Yuan | Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China |
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| Abstract: |
| We systematically investigate the influence of growth interruption time on the properties of InAs/GaSb type-II superlattices (T2SLs) epitaxial materials grown by molecular beam epitaxy (MBE). X-ray diffraction (XRD) and atomic force microscope (AFM) are used to characterize the material quality and morphology. The full width at half maximum (FWHM) of the XRD 0th satellite peaks ranges from 32' to 41', and the root mean square (RMS) roughness on a 5 μm×5 μm scan area is 0.2 nm. Photoluminescence (PL) test is used to reveal the influence of the growth interruption time on the optical property. Grazing incidence X-ray reflectivity (GIXRR) measurements are performed to analyze the roughness of the interface. The interface roughness (0.24 nm) is optimal when the interruption time is 0.5 s. The crystal quality of T2SLs can be optimized with appropriate interruption time by MBE, which is a guide for the material epitaxy of high performance T2SL infrared detector. |
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