| Moustafa Ganoub,Sameh O. Abdellatif,Khaled Kirah,Hani A. Ghali.Investigating the influence of the counter Si-cell on the optoelectronic performance of high-efficiency monolithically perovskites/silicon tandem cells under various optical sources[J].Optoelectronics Letters,2023,(4):215-221 |
| Investigating the influence of the counter Si-cell on the optoelectronic performance of high-efficiency monolithically perovskites/silicon tandem cells under various optical sources |
| Author Name | Affiliation | | Moustafa Ganoub | The Renewable Energy Postgraduate Programme and the FabLab in the Centre for Emerging Learning Technologies CELT, The British University in Egypt BUE, Cairo 11837, Egypt | | Sameh O. Abdellatif | FabLab in the Centre for Emerging Learning Technologies CELT, Electrical Engineering Department, Faculty of Engineering, The British University in Egypt BUE, Cairo 11837, Egypt | | Khaled Kirah | Engineering Physics Department, Faculty of Engineering, Ain Shams University, Cairo, Egypt | | Hani A. Ghali | FabLab in the Centre for Emerging Learning Technologies CELT, Electrical Engineering Department, Faculty of Engineering, The British University in Egypt BUE, Cairo 11837, Egypt |
|
| Abstract: |
| Nowadays, tandem structures have become a valuable competitor to conventional silicon solar cells, especially for perovskite over silicon, as metal halides surpassed Si with tunable bandgaps, high absorption coefficient, low deposition, and preparation costs. This led to a remarkable enhancement in the overall efficiency of the whole cell and its characteristics. Consequently, this expands the usage of photovoltaic technology in various fields of applications not only under conventional light source spectrum in outdoor areas, i.e., AM1.5G, but also under artificial light sources found indoors with broadband intensity values, such as Internet of things (IoTs) applications to name a few. We introduce a numerical model to analyze perovskite/Si tandem cells (PSSTCs) using both crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H) experimentally validated as base cells. All proposed layers have been studied with J-V characteristics and energy band diagrams under AM1.5G by using SCAPS-1D software version 3.7.7. Thereupon, the proposed architectures were tested under various artificial lighting spectra. The proposed structures of Li4Ti5O12/CsPbCl3/MAPbBr3/CH3NH3PbI3/Si recorded a maximum power conversion efficiency (PCE) of 25.25% for c-Si and 17.02% for a-Si:H, with nearly 7% enhancement concerning the Si bare cell in both cases. |
| Hits: 280 |
| Download times: 0 |
|
| View Full Text Download reader |
|
|
|
