| HU Zhaoshuo,XUE Yuming,DAI Hongli,WANG Luoxin,ZHANG Jiuchao,WANG Jiangchao.Effect of preheating and annealing temperature on the microstructure and optoelectronic properties of CZTS films prepared by sol-gel method[J].Optoelectronics Letters,2023,(7):410-415 |
| Effect of preheating and annealing temperature on the microstructure and optoelectronic properties of CZTS films prepared by sol-gel method |
| Author Name | Affiliation | | HU Zhaoshuo | Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China | | XUE Yuming | Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China | | DAI Hongli | Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China | | WANG Luoxin | Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China | | ZHANG Jiuchao | Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China | | WANG Jiangchao | Institute of New Energy Intelligence Equipment, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China |
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| Abstract: |
| The effects of different preheating and annealing temperatures on the surface morphology, microstructure, and optical properties of Cu2ZnSnS4 (CZTS) thin films are investigated by controlling the preheating and annealing temperatures. The prepared thin films were characterized using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and ultra-violet-visible (UV-Vis) spectroscopy techniques. XRD and Raman spectroscopy showed that a Kesterite structure with a selective orientation along the (112) peak was generated, and the thin films produced at a preheating temperature of 300 °C and annealing temperature of 570 °C had fewer secondary phases, which was beneficial for improving the performance of the solar cells. SEM confirms that the crystallite size increases and then decreases as the temperature increases, and the largest and most uniform crystallite size with the smoothest surface is generated at the above preheating and annealing temperatures. UV-Vis measurements show that the thin films generated at the above temperature have the lowest transmittance and the lowest optical band gap value of 1.46 eV, which is close to the optimal band gap value for solar cells and is suitable as an absorber layer material. |
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