| LIU Zhaojun,ZHU Lianqing,LU Lidan,DONG Mingli,ZHANG Dongliang,ZHENG Xiantong.Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier[J].Optoelectronics Letters,2023,(10):577-582 |
| Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier |
| Author Name | Affiliation | | LIU Zhaojun | School of Opto-Electronic Engineering, Changchun University of Science & Technology, Changchun 130022, China | | ZHU Lianqing | Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China | | LU Lidan | Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China | | DONG Mingli | Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China | | ZHANG Dongliang | Key Laboratory of Optical Fiber Sensing and System, Beijing Information Science & Technology University, Beijing 100016, China | | ZHENG Xiantong | Key Laboratory of Optical Fiber Sensing and System, Beijing Information Science & Technology University, Beijing 100016, China |
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| Abstract: |
| This study reports the performance of an InAs/GaSb type-II superlattices (T2SLs) detector with nBn structure for mid-wavelength infrared (MWIR) detection. An electronic band structure of M barrier is calculated using 8-band k.p method, and the nBn structure is designed with the M barrier. The detector is prepared by wet etching, which is simple in manufacturing process. X-ray diffraction (XRD) and atomic force microscope (AFM) characteristics indicate that the detector material has good crystal quality and surface morphology. The saturation bias of the spectral response measurements at 77 K is 300 mV, and the device is promising to work at a temperature of 140 K. Energy gap of T2SLs versus temperature is fitted by the Varshni curve, and zero temperature bandgap Eg(0), empirical coefficients α and β are extracted. A dark current density of 3.2×10-5 A/cm2 and differential resistance area (RA) product of 1.0×104 Ω.cm2 are measured at 77 K. The dominant mechanism of dark current at different temperature ranges is analyzed. The device with a 50% cutoff wavelength of 4.68 mm exhibits a responsivity of 0.6 A/W, a topside illuminated quantum efficiency of 20% without antireflection coating (ARC), and a detectivity of 9.17×1011 cm.Hz1/2/W at 77 K and 0.3 V. |
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