The SCAPS-1D simulator, a one-dimensional solar cell capacitance simulator is utilized for simulating CIGS solar cells. It has been observed that the performance of solar cells can be enhanced by uniformly adjusting the band gap value of the CIGS absorption layer. Upon doing so, the solar cell's conversion efficiency reaches 22.12% when the band gap of the CIGS absorption layer is 1.3eV. Subsequently, the influence of defect type and density on photoelectric properties is analyzed by using the improved absorption band gap. The findings indicate that to heighten the photovoltaic efficiency, it is imperative to minimize the defect concentration in the absorption layer, as high-density defects significantly impact the efficiency, and can even render the conversion efficiency to zero. This study underscores the pivotal influence of band gap adjustments and defect charge types on the photoelectric properties of thin film solar cells. |