Study on the influence of band gap and different defects on the performance of Cu(In, Ga)Se2 solar cells
Author NameAffiliationPostcode
luyahan Tianjin university of technology 300384
xueyuming Tianjin university of technology 
daihongli* Tianjin university of technology 300384
wangluoxin Tianjin university of technology 
liweiwei Tianjin university of technology 
jilicui Tianjin university of technology 
Abstract:
      The SCAPS-1D simulator, a one-dimensional solar cell capacitance simulator is utilized for simulating CIGS solar cells. It has been observed that the performance of solar cells can be enhanced by uniformly adjusting the band gap value of the CIGS absorption layer. Upon doing so, the solar cell's conversion efficiency reaches 22.12% when the band gap of the CIGS absorption layer is 1.3eV. Subsequently, the influence of defect type and density on photoelectric properties is analyzed by using the improved absorption band gap. The findings indicate that to heighten the photovoltaic efficiency, it is imperative to minimize the defect concentration in the absorption layer, as high-density defects significantly impact the efficiency, and can even render the conversion efficiency to zero. This study underscores the pivotal influence of band gap adjustments and defect charge types on the photoelectric properties of thin film solar cells.
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Science and technology innovation development program (No.70304901)
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